BS170 N-Channel MOSFET Pack of 10

 350

  • Type Designator: BS170
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 0.83 W
  • Drain-Source Voltage (VDS): 60 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
  • Gate-Source Voltage (VGS):
    • Continuous: ±20 V
    • Non-repetitive: ±40 Vpk
  • Drain Current (ID):
    • Continuous: 500mA
    • Non-repetitive: 1200mA
  • Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
  • Low On-resistance: 2.5Ω
  • Low input capacitance: 22pF
  • Lead temperature for Soldering: 300℃ (max.)
  • Switching characteristics:
    • Turn On time (TON): 4 to 10ns
    • Turn Off time (TOFF): 4 to 10ns
  • Operating and Storage Temperature Range: -55 to 150℃
  • Package: TO92
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