IR2110 High Voltage, High Speed Power MOSFET and IGBT Driver

Product Description:

The IR2110 DIP Type Mosfet Driver IC is a highly efficient and reliable integrated circuit designed to drive high-power MOSFETs and IGBTs in various applications. This versatile IC enhances the performance of power switching circuits, offering robust protection features and efficient switching capabilities. With its compact DIP package, it ensures ease of integration into your electronic projects, making it an ideal choice for engineers, hobbyists, and electronic enthusiasts seeking optimal power control solutions.

Specifications:

– Package Type: DIP (Dual In-line Package)

– High and Low-Side Outputs

– Output Peak Current: 2A (typical source and sink)

– Maximum Supply Voltage (Vcc): 20V

– Gate Drive Voltage (VGE): 5V to 20V

– Logic Inputs Compatible with CMOS and TTL Signal Levels

– Output Delay Time: 100ns (typical)

– Input Threshold Voltage (Vth): 2V (typical)

– Operating Temperature Range: -40°C to +125°C

– Bootstrap Supply Max Voltage (VB): 600V

– Undervoltage Lockout (UVLO) Protection for Both Channels

Key Features:

– High Current Capability: The IR2110 supports peak output currents of 2A for both high-side and low-side channels, enabling efficient and powerful MOSFET and IGBT switching.

– Flexible Input Compatibility: With logic inputs compatible with both CMOS and TTL signal levels, the IC allows easy interfacing with various microcontrollers and digital circuits.

– Robust Gate Drive Voltage Range: The gate drive voltage can be adjusted between 5V and 20V, ensuring precise control of MOSFET switching characteristics.

– Enhanced Protection Features: The IC includes undervoltage lockout (UVLO) protection for both channels, safeguarding against abnormal voltage conditions.

– Wide Operating Temperature Range: The IR2110 operates reliably in temperatures ranging from -40°C to +125°C, making it suitable for a wide range of industrial and automotive applications.

– Bootstrap Supply Capability: Supporting a maximum bootstrap supply voltage of 600V, it allows for efficient and reliable high-side gate driving.

Whether you’re working on power electronics, motor control, inverters, or any other high-power switching application, the IR2110 DIP Type Mosfet Driver IC ensures smooth and precise operation. Its advanced features, compact package, and high-performance capabilities make it a preferred choice for electronics designers aiming to optimize power control and efficiency in their projects. Invest in the IR2110 IC, and experience unparalleled power switching control for your next electronic endeavor.